RFN6BGE2DTL
Rohm Semiconductor
Deutsch
Artikelnummer: | RFN6BGE2DTL |
---|---|
Hersteller / Marke: | LAPIS Technology |
Teil der Beschreibung.: | SUPER FAST RECOVERY DIODE. RFN6B |
Datenblätte: | None |
RoHs Status: | |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.37 |
10+ | $1.225 |
100+ | $0.9547 |
500+ | $0.7887 |
1000+ | $0.6226 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 980 mV @ 3 A |
Spannung - Sperr (Vr) (max) | 200 V |
Technologie | Standard |
Supplier Device-Gehäuse | TO-252GE |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 25 ns |
Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | 150°C |
Befestigungsart | Surface Mount |
Diodenkonfiguration | 1 Pair Common Cathode |
Strom - Sperrleckstrom @ Vr | 10 µA @ 200 V |
Strom - Richt (Io) (pro Diode) | 3A |
Grundproduktnummer | RFN6 |
CONN N J FLNG MNT 4HOLE
DIODE GEN PURP 600V 5A TO252
CONN N J FLNG MNT 4HOLE
DIODE GEN PURP 800V 5A TO220NFM
DIODE GEN PURP 600V 5A TO252
DIODE GEN PURP 350V 5A TO252
DIODE GEN PURP 800V 5A TO220NFM
DIODE ARRAY GP 200V 3A TO252
CONN N J FLNG MNT 4HOLE
DIODE GEN PURPOSE TO252
DIODE GEN PURP 600V 5A TO220NFM
ROHM SOT-252
DIODE GEN PURP 350V 5A TO252
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
DIODE GEN PURP 600V 5A TO220NFM
CONN N J FLNG MNT 4HOLE
SUPER FAST RECOVERY DIODE (AEC-Q
SUPER FAST RECOVERY DIODE : RFN6
CONN N J FLNG MNT 4HOLE
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() RFN6BGE2DTLRohm Semiconductor |
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